发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE: To facilitate interconnection of thin film integrated circuits and to increase the process margin. CONSTITUTION: A thin film integrated circuit on a glass substrate and external thin film integrated circuit 27 are interconnected, using a converged ion beam. The top ends of electrodes extending from the circuit 24 on the glass substrate are connected to electrode pads 28 of the circuit 27 through conductors of W, using this beam. Thus, the process margin can be increased against the shrinkage and deformation of the glass substrate.</p>
申请公布号 JPH08139333(A) 申请公布日期 1996.05.31
申请号 JP19940295881 申请日期 1994.11.05
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 G02F1/136;G02F1/1368;H01L21/3205;H01L29/786;(IPC1-7):H01L29/786;H01L21/320 主分类号 G02F1/136
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