| 发明名称 |
CONSTRUCTING CMOS VERTICALLY MODULATED WELLS BY CLUSTERED MeV BURIED IMPLANTED LAYER FOR LATERAL ISOLATION |
| 摘要 |
CMOS vertically modulated wells (6, 7, 8, 9) are constructed by using clustered MeV ion implantation to form a structure having a buried implanted layer for lateral isolation.
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| 申请公布号 |
WO9616439(A1) |
申请公布日期 |
1996.05.30 |
| 申请号 |
WO1995US14653 |
申请日期 |
1995.11.09 |
| 申请人 |
GENUS, INC.;BORLAND, JOHN, O. |
发明人 |
BORLAND, JOHN, O. |
| 分类号 |
H01L21/761;H01L21/762;H01L21/8238;H01L27/092;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/761 |
| 代理机构 |
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代理人 |
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