| 摘要 |
PURPOSE: To obtain a semiconductor device having a bump electrode of novel structure in which an alloy, e.g. an Au-Sn alloy, formed through reaction of an Sn plating layer on the surface of an inner lead and a bump electrode does not reach the bottom face in a passivation opening. CONSTITUTION: A passivation opening 9 has the center located closer to the center of a semiconductor substrate than the center of a bump electrode 5. The center of the passivation opening 9 is separated farther from outer lead and located closer to the tip of inner lead than the center of the bump electrode 5. Since the center of passivation opening is located closer to the center of semiconductor substrate than the center of the bump electrode, an alloy, e.g. an Au-Sn alloy, produced through reaction of the Sn plating layer of inner lead and the gold layer of bump electrode is prevented reaching the bottom of the passivation opening without varying the height of the bump electrode 5 or the size of the passivation opening 9. |
