发明名称 Monocrystalline diamond films
摘要 A method is related to grow monocrystalline diamond films by chemical vapor deposition on large area at low cost. The substrate materials are either bulk single crystals of Pt or its alloys, or thin films of those materials deposited on suitable supporting materials. The surfaces of those substrates must be either (111) or (001), or must have domain structures consisting of (111) or (001) crystal surfaces. Those surfaces can be inclined within +/-10 degree angles from (111) or (001). In order to increase the nucleation density of diamond, the substrate surface can be scratched by buff and/or ultrasonic polishing, or carbon implanted. Monocrystalline diamond films can be grown even though the substrate surfaces have been roughened. Plasma cleaning of substrate surfaces and annealing of Pt or its alloy films are effective in growing high quality monocrystalline diamond films.
申请公布号 GB2295401(A) 申请公布日期 1996.05.29
申请号 GB19950024025 申请日期 1995.11.23
申请人 * KABUSHIKI KAISHA KOBE SEIKO SHO 发明人 YOSHIHIRO * SHINTANI;TAKESHI * TACHIBANA;KOZO * NISHIMURA;KOICHI * MIYATA;YOSHIHIRO * YOKOTA;KOJI * KOBASHI
分类号 C30B29/04;C23C16/02;C23C16/26;C23C16/27;C30B25/02 主分类号 C30B29/04
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