发明名称 Compliant layer metallization
摘要 A compliant layer metallization for relieving thermal and mechanical stress developed between a semiconductor (104) and a semiconductor submount (108). The compliant layer metallization includes a compliant layer (206), a wetting layer (210) and a barrier layer (208). The compliant layer provides thermal and mechanical stress relief. The wetting layer ensures adequate wetting during soldering. The barrier layer prevents diffusion of bonding material into the compliant layer and/or into the semiconductor during solder-bonding. The compliant layer metallization design promotes ease of manufacturing. <IMAGE>
申请公布号 EP0714126(A1) 申请公布日期 1996.05.29
申请号 EP19950308163 申请日期 1995.11.14
申请人 AT&T CORP. 发明人 DERKITS, GUSTAV EDWARD, JR.;VARMA, RAMESH R.;LOURENCO, JOSE ALMEIDA
分类号 H01L21/52;H01L23/373;H01S5/02;H01S5/022 主分类号 H01L21/52
代理机构 代理人
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