发明名称 |
Semiconductor device and fabrication method |
摘要 |
A method for fabricating a semiconductor device comprises coating the surface of a semiconductor element (2) with a curable silicone composition (7) in which there is dispersed a filler (8) having an average particle diameter of 0.01 to 500 micrometers and a specific gravity of 0.01 to 0.95 and thereafter curing said composition (7) after the elapse of sufficient time for the filler (8) in the layer of the composition adjoining the element to migrate into the layer of said composition remote from the element (2). <IMAGE> |
申请公布号 |
EP0714125(A2) |
申请公布日期 |
1996.05.29 |
申请号 |
EP19950308313 |
申请日期 |
1995.11.21 |
申请人 |
DOW CORNING TORAY SILICONE COMPANY LIMITED |
发明人 |
ISHIKAWA, TAKAE;MINE, KATSUTOSHI;NAITO, HIROYOSI;YAMAKAWA, KIMIO |
分类号 |
H01L23/29;H01L23/31;(IPC1-7):H01L23/28 |
主分类号 |
H01L23/29 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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