发明名称 Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom
摘要 The present invention provides methods for producing water insoluble, aqueous alkali soluble, film forming novolak resins having an extremely low level of metal ions, utilizing treated anion and cation exchange resins. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resin and for producing semiconductor devices using such photoresist compositions.
申请公布号 US5521052(A) 申请公布日期 1996.05.28
申请号 US19940365659 申请日期 1994.12.30
申请人 HOECHST CELANESE CORPORATION 发明人 RAHMAN, M. DALIL;AUBIN, DANIEL P.;KHANNA, DINESH N.;MCKENZIE, DOUGLAS
分类号 G03F7/023;C08G8/00;C08G8/04;G03F7/004;H01L21/027;(IPC1-7):G03F7/004;G03F7/30;B01J41/00;C08G8/12 主分类号 G03F7/023
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