发明名称 IMPROVED MAGNETO-RESISTANT OXIDE MATERIAL AND ARTICLE CONTAINING THIS MATERIAL
摘要 Materials of composition LavXwMyMnzOx, with x selected from Mg, Sc, Al, Zn, Cd, In and the rare earths that have an ionic radius smaller than that of La, with M selected from Ca, Sr, Ba and Pb, and with v, w, y, z and x in the ranges 0.45-0.85, 0.01-0.20, 0.20-0.45, 0.7-1.3 and 2.5-3.5, respectively, can have substantially improved magnetoresistance (MR) ratios, as compared to the corresponding X-free comparison material. In particular, the novel materials in polycrystalline (or non-epitaxial thin film) form can have relatively large MR ratios. For instance, polycrystalline La0.60Y0.07Ca0.33MnOx had a peak MR ratio in excess of 10,000% (in absolute value) in a field of 6T.
申请公布号 JPH08133741(A) 申请公布日期 1996.05.28
申请号 JP19950251694 申请日期 1995.09.29
申请人 AT & T CORP 发明人 SANGOO JIN;MAAKU TOOMASU MATSUKOOMATSUKU;HENRII MAIRUZU OOBURIAN JIYUNIYA;UOOREN UIRIAMU ROODESU;TOOMASU HENRII TAIFUERU
分类号 G01R33/09;C01G45/00;G11B5/39;H01L43/08;H01L43/10;(IPC1-7):C01G45/00 主分类号 G01R33/09
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