发明名称 |
Low-capacitance, plugged antifuse and method of manufacture therefor |
摘要 |
An antifuse structure in an integrated circuit is provided. The antifuse structure has a first metal interconnection line and a first insulating layer over the first metal interconnection line. The first insulating layer has a via exposing a top surface of the first metal interconnection line. In the first aperture a metal plug contacts the first metal interconnection layer and has a top surface substantially coplanar with a top surface of the first insulating layer. A metal pad contacts and covers the top surface of the metal plug. The metal pad should be formed by a viscous barrier metal, such as TiW, to smooth the surface of the metal plug. A second insulating layer, relatively thin with respect to said first insulating layer, covers the metal pad and has an aperture exposing a top surface of the metal pad. A programming layer deposited over the second insulating layer and into the aperture contacts the top surface of metal pad. A second metal interconnection line rests on the programming layer. In an alternative embodiment the locations of the second insulating layer and the programming layer are reversed.
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申请公布号 |
US5521440(A) |
申请公布日期 |
1996.05.28 |
申请号 |
US19940248789 |
申请日期 |
1994.05.25 |
申请人 |
CROSSPOINT SOLUTIONS, INC. |
发明人 |
IRANMANESH, ALI |
分类号 |
H01L23/522;H01L23/525;(IPC1-7):H01L23/48;H01L23/52;H01L29/40;H01L31/058 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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