| 摘要 |
Two intracell wiring serving as the gate electrodes of driver transistors and load transistors and arranged substantially parallel to each other between two word lines substantially parallel to each other so as to be perpendicular to the word lines are arranged as the first layer. Ground wiring and a power supply wiring are arranged as the second layer on the first layer through an insulating film. Each intracell wiring serves as the gate electrodes of one driver transistor and one load transistor and is connected to the drain regions of the other driver transistor and the other load transistor. The ground wiring are connected to the source regions of the driver transistors, and the power supply wiring is connected to the source regions of the load transistors.
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