| 摘要 |
PURPOSE: To provide a method for producing an REBa2 Cu3 O7-d type oxide superconductor material by which the concn. of 211 phase introduced into a crystal can be made high and the size of the crystal material can be increased. CONSTITUTION: When an REBa2 Cu3 O7-d type oxide superconductor material (RE is one or more kinds of elements selected from among Nd, Sm, Eu, Gd, Dy, Y, Ho, Er, Tm, Yb and Lu) is produced by a melt growing method utilizing a seed crystal method, a precursor contg. RE2 BaCuO5 phase whose concn. is three-dimensionally reduced from the inside at which a seed crystal is set toward the outside is used. Critical current density is made uniform in the resultant material and local unevenness is eliminated. |
