| 摘要 |
Disclosed are phase-shifting masks wherein restriction of light transmission at edges of phase-shifting patterns (e.g., at an edge where a 180 DEG phase-shifting pattern ends on a light transmission region) is avoided, and methods of making such masks. The region of the transparent pattern of the mask, under the edge of the phase-shifting pattern, is made wider than that of the transparent pattern in other regions; moreover, an additional phase-shifting layer is provided at the edge of the phase-shifting pattern, the additional phase-shifting layer having a phase-shift preferably of less than 90 DEG , to avoid a 180 DEG phase shift at the edge. Also disclosed is a phase-shifting mask having repaired defects, and a method for repairing defects in phase-shifting masks, using an additional phase-shifting layer.
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