发明名称 Voltage boosting circuit of a semiconductor memory circuit
摘要 A voltage boosting circuit for boosting a supply voltage VCC supplied from a system to a desired boosting voltage VPP level. The voltage boosting circuit includes a transmission transistor formed by a triple-well process. The transmission transistor has bipolar characteristics and operates as a bipolar diode.
申请公布号 US5521871(A) 申请公布日期 1996.05.28
申请号 US19940342050 申请日期 1994.11.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, HOON
分类号 G11C11/407;G11C5/14;G11C11/403;H01L21/822;H01L27/04;H01L27/10;H02M3/07;H03K5/02;(IPC1-7):G11C11/34 主分类号 G11C11/407
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