发明名称 WIRING STRUCTURE AND PRODUCTION THEREOF
摘要 PURPOSE: To obtain a wiring structure which is free from the peeling of the conductor part and the occurrence of crack of the base material by providing a conductor layer and an insulating film containing a specified polyimide and, in addition, a conductor layer comprising a conductive material on the surface of the insulating film. CONSTITUTION: A polyimide is produced by polymerizing a tetracarboxylic acid dianhydride represented by formula I (wherein R<1> is a tetravalent organic group of, e.g. formula II, III or IV) (e.g. pyromellitic dianhydride) and a diamine compound represented by formula V (wherein R<2> is a divalent organic group of, e.g. formula VI, VII, VIII or IX) (e.g. p-phenylenediamine). A conductor layer (e.g. a chromium layer) and an insulating film containing the polyimide are provided on a base board, and a conductor layer comprising a conductive material (e.g. nickel) is provided on the surface of the insulating film, thus producing a wiring structure. Since the polyimide used has low coefficient of thermal expansion, the crack of the polyimide film does not occur even if a conductor composed mainly of nickel is used for an electrode.
申请公布号 JPH08134212(A) 申请公布日期 1996.05.28
申请号 JP19940279345 申请日期 1994.11.14
申请人 HITACHI LTD 发明人 TOGAWA HIDEO;NISHIKAME MASASHI;MATSUZAKI EIJI;SHIGI HIDETAKA;TERONAI TOSHIROU;OGIWARA MAMORU;MATSUYAMA HARUHIKO;TANAKA MINORU
分类号 C08G73/10;H01L23/498;H05K1/03;H05K1/11;H05K3/46;(IPC1-7):C08G73/10 主分类号 C08G73/10
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