发明名称 Boost voltage generating circuit
摘要 A boost voltage generating circuit includes a boost voltage producing circuit having a first and a second capacitor receiving a first and a second control signal, respectively, a third smoothing capacitor connected at an output terminal, and a first, a second, a third, and a fourth transistor. A boost output voltage is derived through the third and fourth transistors. The boost voltage producing circuit further includes a fourth capacitor connected between the first capacitor and the gate of the third transistor; a fifth capacitor connected between the second capacitor and the gate of the fourth transistor; a fifth transistor having one of a source and a drain connected to the first capacitor with the other thereof connected to the gate of the third transistor and a gate connected to the second capacitor; and a sixth transistor having one of a source and a drain connected to the second capacitor with the other thereof connected to the gate of the fourth transistor and a gate connected to the first capacitor. The arrangement enables to maintain the gate potential of the third and fourth transistors above a predetermined level, thereby preventing the lowering of current driving capability of these transistors and the lowering of current supplying capability for a boost potential.
申请公布号 US5521547(A) 申请公布日期 1996.05.28
申请号 US19950485144 申请日期 1995.06.07
申请人 NEC CORPORATION 发明人 TSUKADA, SHYUICHI
分类号 G11C11/413;G05F3/20;G11C5/14;G11C8/08;G11C11/407;G11C11/41;H02M3/07;(IPC1-7):G05F1/10 主分类号 G11C11/413
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