Prozess zur Herstellung von Halbleitern, bei dem die Bildverzeichnung zwischen dem Muster auf der Halbleiteroberfläche und der dieses erzeugenden Maske kompensiert wird.

摘要

A semiconductor manufacturing process uses a mask (16) which is patterned in a manner to compensate for distortion in performing patterning of processing a wafer (18). The distortion which occurs during processing is represented by a distortion function (12). The distortion function (12) is used for convolving with estimated patterns to obtain predictions of wafer patterns (20) after processing. This can be repeated with other estimated patterns as a trial and error approach to select the estimated pattern which most closely approximates a desired pattern. The selected estimated pattern is then used to pattern a mask (16). The mask (16) is then used in the process to obtain a resulting pattern which closely approximates the desired pattern. In another embodiment, the inverse distortion function (13) is convolved with a desired pattern to obtain the mask pattern (16) which is then used in the process to obtain a finished pattern which is or closely approximates the desired pattern.