发明名称 Mfg. quartz crucible for Czochralski semiconductor crystals
摘要 A graphite melting pot in a rotating housing (22) is filled with quartz sand particles (10). Centrifugal force causes the sand to cling to the sides of the vessel in the desired form of the crucible. Electrodes (14) form a luminous arc that rapidly melts the particles to create the crucible (18). He or N2 is introduced through a pipe (34) and passed, by means of vacuum, spacers and openings (26,30) in the graphite vessel, through the forming crucible to replace the residual gases. This reduces the formation of bubbles and fills the cavities so formed with He or N2.
申请公布号 DE19541372(A1) 申请公布日期 1996.05.23
申请号 DE19951041372 申请日期 1995.11.07
申请人 GENERAL ELECTRIC CO., SCHENECTADY, N.Y., US 发明人 SHELLEY, ROBERT DUNCAN, CHESTERLAND, OHIO, US;LOU, VICTOR LIEN-KONG, SCHENECTADY, N.Y., US
分类号 C03B20/00;B01L3/04;C03B19/04;C03B19/09;C04B35/64;C30B15/10;C30B35/00;(IPC1-7):C03B20/00 主分类号 C03B20/00
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