HETERO-JUNCTION BIPOLAR TRANSISTOR AND THE MANUFACTURING METHOD THEREOF

摘要

The method of fabricating a hetero-junction bipolar transistor includes the steps of forming a sub-collector layer(2) on a GaAs substrate(1), forming a collector layer(3) on the sub-collector layer(2) and implanting p-type impurities to form a high-concentration base layer(4), forming a multiple quantum wells(6c) and potential barrier(6b) alternately on the base layer(4) and forming a AlGaAs layer(6d) thereon, selectively etching the wells(6c) and potential barrier(6b) to expose the base layer(4), forming an emitter resistant contact layer(8) and etching the base layer(4) and collector layer(3) for isolation, and forming a base resistant contact layer(10) on the base layer(4) and forming a collector resistant contact layer(11) on the sub-collector layer(2).