| 发明名称 |
MASK PATTERN AND METHOD OF MICROPATTERNING USING THEM |
| 摘要 |
The matrix type mask pattern for forming a resist pattern using photolithography includes separate patterns at the intersection of horizontal and vertical regions dividing matrix patterns, the separate pattern having the size which does not allow a resist pattern to be formed by exposure.
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| 申请公布号 |
KR960006823(B1) |
申请公布日期 |
1996.05.23 |
| 申请号 |
KR19930006805 |
申请日期 |
1993.04.22 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, DONG - SUN;SONN, CHANG - JIN;HAN, WOO - SUNG |
| 分类号 |
G03F7/00;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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