HIGH SPEED BIPOLAR TRANSISTOR FABRICATION PROCESS

摘要

forming an burying layer (1) by injecting impurities on p-type silicone substrate and then forming a first insulating film (2) and a first polycrystalline silicone film sequentially; forming a first side film (7) by coating the insulators(4),(5),(6) sequentially and etching the above four insulators (4),(5),(6) and the above first polycrystalline silicone film (3) sequentially and then etching after coating an insulating film; forming a first oxide film (9) by thermal oxidation of upper surface of a collector layer (8) after etching the above first side film (7) and growing the collector layer; forming a second oxide film (11) by thermal oxidation of the polycrystalline silicon film (1) after etching the above first side film (7) and forming the polycrystalline silicone layer (10); growing a p+SiGe base layer (13) selectively by removing the above second oxide film (11) and the above fourth insulating film (7); and forming a second side film (14) in the side of upper surface of the above base layer (13) after removing the above third insulating film (5) with selective etching process; defining an emitter (15) with masking and etching process after making polycrystalline silicone in upper part of the second side film (14) and the above base layer (9).