发明名称 |
METAL WIRE FORMING METHOD |
摘要 |
The method prevents the metal wire from cutting in the fabrication of the semiconductor device. The method uses the aluminum alloy(8) as an etch mask of the contact hole and forms the tungsten plug. In forming the tungsten plug, though the upper region of the contact hole is etched due to the etch back process, the plug and the second aluminum alloy(10) remains connected.
|
申请公布号 |
KR960006694(B1) |
申请公布日期 |
1996.05.22 |
申请号 |
KR19920024637 |
申请日期 |
1992.12.17 |
申请人 |
LG SEMICONDUCTOR CO., LTD. |
发明人 |
KIM, CHANG - RYUL |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|