Method for fabricating a semiconductor laser diode

摘要

A method for fabricating a semiconductor laser for performing etching and regrowing of a semiconductor layer of the semiconductor laser in a process once by using a liquid phase etching which is a characteristic of a liquid phase epitaxy is executed by forming a DH-structured semiconductor layer on a substrate, forming a dielectric layer on the semiconductor layer, selectively etching the dielectric layer to expose a predetermined portion of the semiconductor layer, and selectively etching the exposed semiconductor layer using the dielectric layer as mask via the liquid phase etching method and successively regrowing the semiconductor layer on the etched portion via the liquid phase epitaxy. Thus, the DH structure is etched using a melt-back process to instantly execute the regrowth under the state of being unexposed to the air for easily providing the semiconductor laser of high reliability.