发明名称 Method and apparatus for recharging of silicon granules in Czochralski single crystal growing
摘要 <p>The invention provides an improvement in a recharger system consisting of a feeder and a feed conduit for recharging polycrystalline silicon granules into the crucible after a run of growing a single crystal silicon rod by the Czochralski method so as to prepare for the next run of crystal growing. The improvement comprises controlling the amount of holdup of the silicon granules in the feed conduit by means of a sensor provided on the feed conduit so as to ensure smooth and high-rate feed of the silicon granules in such a way that the feed rate of the silicon granules from the feeder to the feed conduit and/or the descending velocity of the crucible can be controlled by the signals generated in the sensor corresponding to the amount of the holdup in the feed conduit. <IMAGE></p>
申请公布号 EP0712945(A1) 申请公布日期 1996.05.22
申请号 EP19950117746 申请日期 1995.11.10
申请人 SHIN-ETSU HANDOTAI COMPANY LIMITED 发明人 NAGAI, NAOKI;ODA, MICHIAKI;OHTSUKA, SEIICHIRO;HARADA, ISAMU
分类号 C30B15/20;C30B15/02;C30B29/06;C30B35/00;(IPC1-7):C30B15/02 主分类号 C30B15/20
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