| 摘要 |
The method of fabricating a DRAM includes the steps of forming of a MOSFET having LDD-structure active regions(8,8') in a predetermined portion of a semiconductor substrate(1), forming a first storage node(10) of polysilicon on one of the active regions(8'), forming a bit line on the other active region(8), forming a second storage node(18) on the first storage node(10), forming a third storage node(23) on the second storage node(18) to form three-level storage node, forming a dielectric layer(25) on the surface of the three-level storage node, and forming a plate electrode(26) on the dielectric layer(25).
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