HIGH INTEGRATED SEMICONDUCTOR CONNECTION APPARATUS AND THE MANUFACTURING METHOD THEREOF

摘要

The apparatus is manufactured by connecting the first conductive line with the second conductive line electrically minimizing overlapping area of the above two conductive lines at the connections. The method has steps including: locating a bit-line contact formed in drain area (2) and memory capacitor contact (4) in a line of the same direction as the direction of bit-line (3) not extending active area (1a) used as drain area downward; burying the bit-line contact (2) completely when forming a conductive media after extending the bit-line contact (2) to specific upper part of an isolation insulator at upper and lower part of the drain area; overlapping contact area extended to the upper part of the device isolation insulating film not allowing to be overlapped with bit-line contact (2) completely at masking; and remaining conductive media for bit-line in specific thickness in the lower part of the thick bit-line contact (2) area by adjusting etching thickness.