发明名称 |
Method of isolating vertical shorts in an electronic array using laser ablation |
摘要 |
A process for repairing an electronic army wafer assembly having a short circuit between two non-insulative layers separated by a dielectric layer includes the step of selectively ablating one of the non-insulative layers so as to electrically isolate the situs of the short circuit while maintaining the electrical integrity of the underlying non-insulative layer intact. A laser beam is directed onto the non-insulative layer and scanned in a selected pattern to isolate the situs of the short circuit; the laser is further controlled such that a selected energy density is delivered to the surface to be ablated such that the underlying non-insulative layer is not damaged.
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申请公布号 |
US5518956(A) |
申请公布日期 |
1996.05.21 |
申请号 |
US19930115082 |
申请日期 |
1993.09.02 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
LIU, YUNG S.;GUIDA, RENATO;WEI, CHING-YEU |
分类号 |
B23K26/00;G02F1/1362;H01L21/48;H01L21/768;H01L27/14;H05K3/22;(IPC1-7):H01L21/26 |
主分类号 |
B23K26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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