| 摘要 |
In a semiconductor device of gate self-alignment structure, at least two lamination layer portions each composed of a gate electrode, an insulating film and a conductive film are formed on a semiconductor substrate with a contact hole sandwiched therebetween. A wire is formed on the respective lamination layer portions. Further, a total thickness of the conductive film and the wire is determined to be large enough to prevent impurities implanted into the wire from being doped into the gate electrode. In formation of the gate self-alignment structure, an insulating side wall is formed on the side wall of the contact hole, to insulate the gate electrode from the wire or vice versa.
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