发明名称 |
High growth rate plasma diamond deposition process and method of controlling same |
摘要 |
A process for depositing diamond on a substrate using a microwave plasma generator including introducing a feed which includes diamond forming constituents in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma which emits a spectrum monitored to maintain a relative emission intensity ratio of two of the constituents in a predetermined range, for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.
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申请公布号 |
US5518759(A) |
申请公布日期 |
1996.05.21 |
申请号 |
US19950377124 |
申请日期 |
1995.01.23 |
申请人 |
APPLIED SCIENCE AND TECHNOLOGY, INC. |
发明人 |
SEVILLANO, EVELIO;BOURGET, LAWRENCE P.;POST, RICHARD S. |
分类号 |
C23C16/27;C23C16/52;(IPC1-7):B05D3/06;C23C16/50 |
主分类号 |
C23C16/27 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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