发明名称 High growth rate plasma diamond deposition process and method of controlling same
摘要 A process for depositing diamond on a substrate using a microwave plasma generator including introducing a feed which includes diamond forming constituents in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma which emits a spectrum monitored to maintain a relative emission intensity ratio of two of the constituents in a predetermined range, for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.
申请公布号 US5518759(A) 申请公布日期 1996.05.21
申请号 US19950377124 申请日期 1995.01.23
申请人 APPLIED SCIENCE AND TECHNOLOGY, INC. 发明人 SEVILLANO, EVELIO;BOURGET, LAWRENCE P.;POST, RICHARD S.
分类号 C23C16/27;C23C16/52;(IPC1-7):B05D3/06;C23C16/50 主分类号 C23C16/27
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