| 发明名称 |
Phosphor material based on manganese-doped zinc silicate and method for obtaining such a material |
| 摘要 |
A phosphor material based on manganese-doped zinc silicate, in which the manganese doping level ranges from 3.5% to 25%, can be used to obtain a very short time of decay after excitation.
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| 申请公布号 |
US5518655(A) |
申请公布日期 |
1996.05.21 |
| 申请号 |
US19950433032 |
申请日期 |
1995.05.03 |
| 申请人 |
THOMSON-CSF |
发明人 |
MORELL, ANTOINETTE;GOUMARD, NATHALIE |
| 分类号 |
C09K11/08;C09K11/59;(IPC1-7):C09K11/59;C09K11/68 |
主分类号 |
C09K11/08 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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