发明名称 FORMING METHOD OF METAL THIN FILM PATTERN
摘要 PURPOSE: To form a sharp pattern out of a metal thin film even if it is thick by a method wherein a film formed of long-chain high molecular material is arranged on the surface of a metal thin film formed on the surface of a substrate, and the pattern of a mask is transferred onto the high-molecular material by irradiation with excimer laser rays from above. CONSTITUTION: A metal thin film 2 is laminated on the surface of a substrate 1. A thin film 5 formed of long-chain high molecular material is provided onto the surface of the metal thin film 2. The long-chain high molecular material has such a physical property that it is ablated by a laser beam 4. The laser beam 4 is made to irradiate the thin film 5 passing through a mask 5, and the thin film 5 is ablated by the laser beam 4. By irradiation with the laser beam 4, laser energy is absorbed in the thin film 5 to cut off bonds between the molecules contained in it, and ablated molecules 7 are scattered outside from an irradiated spot 6 at an ultrasonic speed. A high pressure 8 is generated at the spot 6 irradiated with the laser beam 4 by the reaction of scattering molecules against the surface of the metal thin film 2, so that a part of the metal thin film 2 corresponding to the irradiated spot 6 is separated from the surface of the substrate 1.
申请公布号 JPH08130359(A) 申请公布日期 1996.05.21
申请号 JP19940304141 申请日期 1994.10.31
申请人 NISSIN ELECTRIC CO LTD 发明人 SENBAYASHI AKIRA;IDENO SHINICHI;KAWAKITA TAMOTSU
分类号 B23K26/00;B23K26/06;C23F4/04;H05K3/02 主分类号 B23K26/00
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