| 摘要 |
<p>PURPOSE: To manufacture a mask for charged particle beam exposure which is free from defects with a high yield and at a low cost in a relatively simple manufacturing process. CONSTITUTION: Recessed patterns 31a which are to be through-patterns are formed in the surface of an Si substrate 1a to obtain a substrate 1b having recessed patterns. The rear of a thin film forming region including the recessed patterns 31a is subjected to etching until the bottom parts of the recessed patterns 31a are etched to form a thin film part 3 having through-patterns 31 in its surface. When the thin film part 3 is formed, fluorine resin protective films 6 are formed on the surface of a substrate 1b, in the recessed patterns 31a and the side surfaces of the substrate 1b. With this constitution, a mask 1 for charged particle beam exposure which has the through-patterns 31 through which the charged particle beam can be transmitted in its thin film part 3 which is supported by a support frame 2 can be obtained.</p> |
