| 摘要 |
A low inductance coaxial semiconductor switching module and methods of operating the same. The module can contain high power, high frequency semiconductor switching devices, operated to provide high power at low inductance. The module incorporates compositional, geometrical and electrical symmetry in a coaxial configuration. The module also includes short internal leads, a special circumferential array of substrates, a special circular gate circuit, a special circular kelvin circuit, and special terminal subassembly and special module mounting features.
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