| 摘要 |
PURPOSE: To industrially and stably produce an org. polysilane film high in flatness and excellent in orientation property by irradiating the top surface of a raw org. polysilane with a heat ray at the time of growing the organic polysilane film on the surface of the substrate by heating and evaporating the raw org. polysilane under a reduced pressure. CONSTITUTION: At the time of growing the org. polysilane film on the surface of the substrate by heating and evaporating the raw org. polysilane (e.g. permethylpolysilane, etc.) under a reduced pressure of about 10<-6> Torr, for example, the org. polysilane is heated and evaporated by irradiating the top surface of the raw org. polysilane with the heat ray by using an infrared ray lamp. In this way, the org. polysilane film high in flatness and excellent in orientation property is obtained. |
