发明名称 Method of manufacturing thin film transistors in a liquid crystal display
摘要 A method of manufacturing a semiconductor device according to the present invention includes a process of introducing impurities into a semiconductor layer with a gate electrode and a resist film as a mask after a resist film is formed on the top and the side of the gate electrode by soaking the gate electrode on a semiconductor layer in an electrolyte containing resist and applying voltage to the gate electrode.
申请公布号 US5518940(A) 申请公布日期 1996.05.21
申请号 US19950368906 申请日期 1995.01.05
申请人 FUJITSU LIMITED 发明人 HODATE, MARI;MATSUMOTO, NORIHISA;OHGATA, KOHJI;WADA, TAMOTSU;YANAI, KEN-ITI;OKI, KEN-ICHI;MISHIMA, YASUYOSHI;TAKEI, MICHIKO;KAKEHI, TATSUYA;OKABE, MASAHIRO
分类号 G02F1/1362;H01L21/265;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):H01L21/823 主分类号 G02F1/1362
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