发明名称 |
FORMATION OF FILM AND FILM FORMING DEVICE |
摘要 |
PURPOSE: To provide a method for forming a film in which the formation of a film of high quality free from the incorporation of impurities and free from the generation of voids is enabled at a high speed and to provide a film forming device therefor. CONSTITUTION: The method for forming a film in which raw material fine powder is introduced to the inside of a plasma generating part 3 made of a quartz tube 4 and in which coils 5 applied with high frequency voltage are arranged around the same via a carrier gas constituted of an inert gas. Based on the energy of plasma in the plasma generating part 3 confined by a gas for cooling flowed around the same, the state of the raw material fine powder is formed into a molten one, which is jetted onto a substrate 12 set in an atmosphere of an inert gas, and film deposition is executed to the substrate 12, and the film forming device therefor are provided. |
申请公布号 |
JPH08127876(A) |
申请公布日期 |
1996.05.21 |
申请号 |
JP19940268696 |
申请日期 |
1994.11.01 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KODERA KOICHI;TANAKA HIROYOSHI;SHIOKAWA AKIRA;UCHIDA MASAO |
分类号 |
C23C16/50;H01L21/205;H01L31/04 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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