发明名称 FORMATION OF FILM AND FILM FORMING DEVICE
摘要 PURPOSE: To provide a method for forming a film in which the formation of a film of high quality free from the incorporation of impurities and free from the generation of voids is enabled at a high speed and to provide a film forming device therefor. CONSTITUTION: The method for forming a film in which raw material fine powder is introduced to the inside of a plasma generating part 3 made of a quartz tube 4 and in which coils 5 applied with high frequency voltage are arranged around the same via a carrier gas constituted of an inert gas. Based on the energy of plasma in the plasma generating part 3 confined by a gas for cooling flowed around the same, the state of the raw material fine powder is formed into a molten one, which is jetted onto a substrate 12 set in an atmosphere of an inert gas, and film deposition is executed to the substrate 12, and the film forming device therefor are provided.
申请公布号 JPH08127876(A) 申请公布日期 1996.05.21
申请号 JP19940268696 申请日期 1994.11.01
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KODERA KOICHI;TANAKA HIROYOSHI;SHIOKAWA AKIRA;UCHIDA MASAO
分类号 C23C16/50;H01L21/205;H01L31/04 主分类号 C23C16/50
代理机构 代理人
主权项
地址