发明名称 INTEGRATED CIRCUIT PASSIVATION PROCESS AND STRUCTURE
摘要 A method for forming a UV transmission passivation coating on an integrated circuit, such as an EPROM, after completion of the active device and metal routing circuitry (11-17 and 20-22) comprising a first barrier dielectric layer (24) over the integrated circuit; smoothing out underlying features by applying a layer of flowable dielectric (25) over the first dielectric layer; and depositing a second dielectric layer over the flowable dielectric, which is composed of a first protective dielectric (27), such as silicon oxynitride, and a phosphorus doped silica layer (28) to provide a stress buffer.
申请公布号 WO9614657(A1) 申请公布日期 1996.05.17
申请号 WO1994US12780 申请日期 1994.11.07
申请人 MACRONIX INTERNATIONAL CO., LTD.;JIN, BEEN, YIH;YEN, DANIEL, L., W.;HWANG, WEN, YEN;WANG, MING, HONG;WONG, SHENG, HSIEN;HUANG, GINO;CHANG, PO, SHEN;LIU, YU, TSAI;CHANG, CHUNG, CHI;YANG, TA, HUNG 发明人 JIN, BEEN, YIH;YEN, DANIEL, L., W.;HWANG, WEN, YEN;WANG, MING, HONG;WONG, SHENG, HSIEN;HUANG, GINO;CHANG, PO, SHEN;LIU, YU, TSAI;CHANG, CHUNG, CHI;YANG, TA, HUNG
分类号 H01L21/8247;H01L21/302;H01L21/306;H01L21/3065;H01L21/314;H01L21/316;H01L21/318;H01L21/336;H01L23/31;H01L23/532;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/02 主分类号 H01L21/8247
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