发明名称 SEMICONDUCTOR DEVICE AND PRODUCTION THEREOF
摘要 <p>PURPOSE: To produce a cumulatively bonded semiconductor device having high bonding strength while decreasing the number of production steps. CONSTITUTION: A first electrode 11 and an insulation film 12 therefor are formed on the surface of a first semiconductor substrate 10. A second electrode 14 and an insulation film 15 therefor are then formed on the surface of a second semiconductor substrate 13. An irregular pattern having saw-tooth cross-section is formed in stripe at a predetermined period on the surface of the first substrate 10 while an irregular saw-tooth pattern, having phase shifted by 180 deg. from that of the first semiconductor substrate 10, is formed in stripe on the surface of the second semiconductor substrate 13. First and second semiconductor substrates 10, 13 are bonded with the irregularities on the surface mating each other.</p>
申请公布号 JPH08125121(A) 申请公布日期 1996.05.17
申请号 JP19950198827 申请日期 1995.08.03
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SUGIYAMA TATSUO;HIRAO HIDEJI;YANO KOSAKU;NOMURA NOBORU
分类号 H01L21/60;H01L21/603;H01L27/00;(IPC1-7):H01L27/00 主分类号 H01L21/60
代理机构 代理人
主权项
地址