METHOD FOR FORMING EXTREMELY FINE PATTERN OF COMPOUND SEMICONDUCTOR

摘要

PURPOSE: To provide a method for readily obtaining an epitaxial growth layer with excellent reproducibility and a flat surface, and provide a method for forming a fine pattern having a wire width of 50nm or less. CONSTITUTION: On a GaAs substrate 10 having a surface slightly inclined only at a specific angle from a (001) crystalline surface, a compound semiconductor 11 is formed. The surface comes into contact with oxygen gas and a light is emitted to form an optical oxide film 12. Etching gas 13 such as chlorine gas or the like is emitted while electronic beams 14 are scanned, so that the oxide film 12 in a specific region is removed. Only the etching gas 13 is emitted and an exposure part of the compound semiconductor 11 is etched with the use of the oxide film 12 as an etching mask.