| 摘要 |
<p>PURPOSE: To provide a new zirconium-based organic metal precursor where vapotization property, and stability at a vaporization temperature are improved, and a lead-zirconium-titanium thin film with improved reliability and reproducibility, where its organic metal precursor is synthesized by an in-site process. CONSTITUTION: Zirconium-based organic metal precursor for ferroelectric PZT thin film that is indicated by Lx .Zr(THD)4 (L is an electron-giving ligand selected from among a group that is constituted of NR3 (R=H, CH3 ) gas and Cl2 gas, THD indicates 2.2', 6,6'-tetramethyl-3,5-heptanedione, and X ranges from 0.3 to 1.5 when L is NR3 and ranges from 0.5 to 2, when L is Cl2 ) is manufactured by loosely moving an electron-giving body in gas shape at a constant temperature by a bubbler containing tetra Zr and synthesizing a reactive adduct insite.</p> |
