VAPOR GROWTH METHOD AND DEVICE

摘要

PURPOSE: To obtain a thin film which is prescribed in thickness and resistivity distribution when it is formed on the surface of a substrate by the use of a horizontal vapor growth device by a method wherein a mixed gas close to the surface of the substrate is properly controlled in the concentration distribution of component gases and dopant in the crosswise direction of a reaction chamber. CONSTITUTION: Lower gas inlets 18 (inlet for material gas 31) are arranged in parallel in the crosswise direction of the reaction vessel 1 on a lower side of a point which is located down the upper gas feed inlet 13 (inlet for carrier gas 32) of a reaction vessel 1 by a prescribed distance L (cm) and where the eddy 34 of carrier gas 32 is generated. The distance L is set equal to or preferably larger than the sum of H (cm)×1.8+1.0cm. The lower gas inlets 18 are properly controlled in flow rate or concentration of material gas respectively.