| 摘要 |
PURPOSE: To securely discharge a substrate before exposure to electron beams, by providing a pair of electrodes formed on the sidewall of a cavity and adapted for applying an electric power for forming a plasma of a reactive gas fed into the cavity. CONSTITUTION: An aperture end 22 of a cylindrical body 21 of a partial removal device for film is located in contact with or at a short distance from a film to be processed 13. Then, an exhaust device, such as, a rotary pump or a turbo molecular pump, connected to the exhaust port 22 is actuated to exhaust the air within a cavity 24. As the pressure within the cavity has reached a predetermined level, an etching gas for the film 13 is fed into the cavity 24 from a gas feed port 26. Then, a voltage is applied to the etching gas, and the film 13 starts to be etched. As this state is maintained for a predetermined time period, a part of the film 13 is removed to expose an opaque film 12. |
