| 摘要 |
<p>PURPOSE: To improve work environment for anodic oxidation by making a gate bus line and a gate electrode of metallic material having low resistance, and forming an anodic oxidation film to cover the gate bus-line and the gate electrode so that a boundary to a gate terminal part may be excellent in control ability. CONSTITUTION: A thin film transistor substrate has a gate bus line 12; a signal bus line 14; a thin film transister 16; a gate terminal part 18; and a gate electrode 20, and the gate bus line 12 and the gate electrode 20 are formed of an aluminum layer 52, and the gate terminal part 18 has structure where aluminum 52, titanium 54 and ITO 56 are overlapped, and the gate bus line 12 and the gate electrode 20 are covered by an aluminum anodic oxidation film 34, and an anodic oxidation film 34 is obtained by carrying out an anodic oxidation treatment as it is covered by the titanium layer 54.</p> |
