| 摘要 |
PURPOSE: To flatten the insulating layer of thin film multilayer wirings while preventing the polishing damage of specific depth or more by polishing to flatten the insulating layers of layers with polishing agent made of GC abrasive grains or alumina abrasive grains having a specific range of mean grain size. CONSTITUTION: Insulating layers 8, 11 of layers are flattened to be polished by polishing agent made of GC abrasive grains or alumina abrasive grains having a mean grain size of 0.1-0.6μm. Thus, the polishing damage depth of the layers 8, 11 of thin film multilayer wirings is suppressed to 0.2μm or less, and the stepwise difference of a conductor post head 7 can be flattened, and thin film multilayer wirings in which disconnection due to the short-circuit or stepwise cut of sputter owing to an etching residue is prevented can be formed. The polishing process can be conducted without reducing the polishing efficiency since the mean grain size of the polishing abrasive grains is obtained. |
