| 摘要 |
PURPOSE: To obtain an electron wave interference element suitable for fine patterning and high integration in which the switching function is provided utilizing a principle different from that for MOSFET transistor. CONSTITUTION: In an electron wave interference element where the conduction of carrier between input and output electrodes is controlled through modulation of electron wave, an electric field is applied to a plurality of carrier conduction paths 10 formed perpendicularly to the conducting direction of carrier between a source electrode 4 and a drain electrode 9 formed while being isolated electrically. Consequently, the energy level of the carrier conduction path 10 is varied and an electron wave passing through the carrier conduction path 10 is modulated. |
