| 摘要 |
PURPOSE: To prevent optical damage from being generated in the vicinity of a laser resonator end face by comprising an ion-implanted region, in which the multiple quantum well structure or superlattice structure of the active layer is disordered by ion-implanting an element belonging to the same group as a group to which an element constituting an active layer belongs in the vicinity of the laser resonator end face in the active layer. CONSTITUTION: Al ions are ion-implanted in the vicinity of the lower part of a ridge part 9 of an active layer 5 in the vicinity of a laser oscillator end face 12, whereby the layer 5 in an Al ion-implanted region 10 is disordered and the value of the band gap of the layer 5 becomes 1.727eV and becomes a value at which light, which is emitted in the layer 5, is not absorbed. Moreover, Al ions are ion-implanted in 1×10<19> to 1×10<20> cm<-cm> or so and the band gap is enlarged to 0.012eV or so. As this result, a laser beam oscillated in the layer 5 is not absorbed in the vicinity of the end face 12 in the layer 5, excitation of carriers due to photoabsorption is not caused, the generation of heat due to a non-radiative recombination of the carriers is hardly caused, and the possibility of causing optical damage in the vicinity of the end face 12 is reduced. |
