| 摘要 |
PURPOSE: To provide a structure by which a quantum fine wire of good quality can be easily obtained. CONSTITUTION: A semiconductor device has a structure that a groove with a section formed into a V shape is provided in at least a part of an epitaxially grown layer grown in a semiconductor substrate or on a semiconductor substrate, an active layer is provided on the bottom part of the groove formed into the V shape and the active layer is inserted in a clad layer, and is provided with a light guide layer, which has a refractive index smaller than that of the active layer and larger than that of the clad layer and is formed between the active layer and the clad layer. |
