| 摘要 |
<p>PURPOSE: To obtain a solid state image sensor with color filter, and production method thereof, in which the color filter can be made thin. CONSTITUTION: The solid state image sensor comprises a semiconductor substrate 11, a photoelectric conversion element 12 formed thereon, a section for transferring the output signal from the photoelectric conversion element 12 or an output signal wiring section 13 formed on the substrate 11, a single filter layer 14 including color filter regions 14a, 14b, 14c corresponding to respective photoelectric conversion elements 12 provided individually on the transfer section or the wiring section 13, and an overcoat layer 16 covering the filter layer 14 to make smooth the surface thereof.</p> |
