| 摘要 |
PURPOSE: To confine carriers in an active layer even at a high temperature and to prevent the light output of a semiconductor laser from being reduced extremely in the semiconductor laser wherein a drive current is increased. CONSTITUTION: In a semiconductor laser of a structure that an N-type GaAs layer 2, a clad layer 3, a light guide layer 4, an active layer 6 consisting of a multiple quantum well structure, a light guide layer 8, a clad layer 9 and a P-type GaAs layer 10 are laminated in order on an N-type GaAs substrate 1, carrier barrier layers 5 and 7 consisting of a material of an energy band gap larger than that of the layer 6 and the layers 4 and 8 are respectively provided between the layer 6 and the layer 4 and between the layer 6 and the layer 8. |
