发明名称 SEMICONDUCTOR DYNAMIC QUANTITY SENSOR AND FABRICATION THEREOF
摘要 <p>PURPOSE: To enhance the dielectric strength between the movable electrode/fixed electrode and a substrate regardless of the etching time of a sacrifice layer by depositing an LOCOS oxide film between a semiconductor substrate and a fixed part. CONSTITUTION: An LOCOS oxide film 111 is deposited on a semiconductor substrate 1 and a part thereof is used as an anchor in the formation of a fixed electrode 64 for excitation. When Coriolis force acting on an oscillator due to yaw rate is detected with high sensitivity, it is effective to increase the oscillation speed. When the amplitude of the oscillator oscillating at resonance frequency is increased, the voltage being applied to the fixed electrode for excitation must be increased. Since the fixed electrode 64 for excitation is provided on the LOCOS oxide film having high dielectric strength, a voltage higher than normal level can be applied to the fixed electrode 64 for excitation and a high sensitivity yaw rate sensor having large amplitude of weight can be constituted. Furthermore, dielectric breakdown does not take place easily even if a high voltage is applied to the fixed electrode 61 for excitation.</p>
申请公布号 JPH08125199(A) 申请公布日期 1996.05.17
申请号 JP19940265776 申请日期 1994.10.28
申请人 NIPPONDENSO CO LTD 发明人 TAKEUCHI YUKIHIRO;YAMAMOTO TOSHIMASA;HATTORI TADASHI
分类号 G01L1/14;B81B3/00;G01C19/56;G01P15/00;G01P15/097;G01P15/10;G01P15/12;G01P15/125;G01P15/13;H01L29/84;(IPC1-7):H01L29/84 主分类号 G01L1/14
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