| 摘要 |
<p>PURPOSE: To obtain a semiconductor device excellent in adhesion between a Cu film and a barrier metal at the bump electrode part of a flip-chip or the wiring part of LSI. CONSTITUTION: A functional element, i.e., a transistor, is formed on a silicon substrate 1 and provided with a bump electrode 8 for making a contact with an external board 11. A metal film 3 is deposited on the surface of the silicon substrate 1, an insulation film 4 is deposited thereon and a part of the metal film 3 is exposed through a contact hole 4a. A barrier metal 5 is deposited on the metal film 3 in the contact hole 4a and an adhesion layer 6 of titanium is formed thereon followed by formation of a Cu film 7 for growing a bump further thereon. Finally, a bump electrode 8 of Cu is formed on the Cu film 7 for growing a bump.</p> |
